Polaronic Effects of a Hydrogenic Donor Impurity in Low Dimensional Semiconductor Systems
نویسندگان
چکیده
منابع مشابه
Electronic states of a hydrogenic donor impurity in semiconductor nano-structures
We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nanostructures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic ...
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The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and les...
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• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملElectronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures
The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelopefunction theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the ...
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In this work using the effective-mass approximation within a variational approach we study the effect of the 3D longitudinal optical phonons on the energy of a shallow donor impurity in a GaAs–(Ga,Al)As quantum-well wire with a magnetic field applied in the wireaxis direction. We obtain the energy of the lower impurity states as a function of the wire radius, the donor position inside the wire,...
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ژورنال
عنوان ژورنال: Journal of Scientific Research
سال: 2009
ISSN: 2070-0245,2070-0237
DOI: 10.3329/jsr.v1i3.2529